q?v~zy??q?v?_ra]u??qcabdq HIH30N60BP v ces = 600 v i c =30 a v ce(sat) typ = 2.2 v absolute maximum ratings HIH30N60BP 600v pt igbt symbol parameter value units v ces collector-emitter voltage 600 v i c collector current ? continuous (t c = 25 e ) 60 a collector current ? continuous (t c = 100 e ) 30 a i cm collector current ? pulsed (note 1) 90 a i f diode forward current ? continuous (t c = 25 e ) 60 a diode forward current ? continuous (t c = 100 e ) 30 a i fm diode current ? pulsed (note 1) 90 a v ges gate-emitter voltage 20 v t sc short circuit withstand time (v ge =15v, v cc =400v, t c =150 e ) 5 3 p d power dissipation (t c = 25 e ) 208 w t j operating temperature range -40 to +150 e t stg storage temperature range -55 to +150 e t l maximum lead temperature for soldering purposes, 1/8? from case for 5 seconds 260 e thermal resistance characteristics symbol parameter typ. max. units r jc (igbt) junction-to-case -- 0.6 e /w r jc (diode) junction-to-case -- 0.9 r ja junction-to-ambient -- 40 dec 2013 notes. 1. pulse width limited by max junction temperature ? low v ce(sat) ? maximum junction temperature 150 e ? short circuit withstand time 5 ? ? designed for operation between 1-20khz ? very tight parameter distribution ? high ruggedness, temperature stable behavior features e c g to-3p
q?v~zy??q?v?_ra]u??qcabdq HIH30N60BP electrical characteristics of the igbt t c =25 q c unless otherwise specified symbol parameter test conditions min typ max units v ge(th) gate-emitter threshold voltage v ce = v ge , i c = 1.2 ma 4.4 5.7 6.6 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 30 a t c = 25 e -- -- 2.2 2.2 2.6 2.7 v t c = 125 e on characteristics bv ces collector-emitter breakdown voltage v ge = 0 v, i c = 1 ma 600 -- -- v i ces zero gate voltage collector current v ce = 600 v, v ge = 0 v -- -- 100 3 i ges gate-emitter leakage current v ge = 20 v, v ce = 0 v -- -- 100 2 off characteristics c iss input capacitance v ce = 25 v, v ge = 0 v, f = 1.0 mhz -- 1044 -- ? c oss output capacitance -- 143 -- ? c rss reverse transfer capacitance -- 53 -- ? dynamic characteristics t d(on) turn-on time v cc = 300 v, i c = 30 a, r g = 20 ? 9 ge = -10/15v inductive load, t c = 25 e -- 57 -- t r turn-on rise time -- 81 -- t d(off) turn-off delay time -- 139 -- t f turn-off fall time -- 152 -- e on turn-on switching loss -- 0.87 -- mj e off turn-off switching loss -- 1.02 -- mj e ts total switching loss -- 1.89 -- mj t d(on) turn-on time v cc = 300 v, i c = 30 a, r g = 20 ? 9 ge = -10/15v inductive load, t c = 125 e -- 52 -- t r turn-on rise time -- 86 -- t d(off) turn-off delay time -- 148 -- t f turn-off fall time -- 334 -- e on turn-on switching loss -- 1.02 -- mj e off turn-off switching loss -- 1.72 -- mj e ts total switching loss -- 2.74 -- mj q g total gate charge v cc = 480v, i c = 30 a, v ge = 15 v -- 104 -- nc l e internal emitter inductance -- 13 -- nh i c(sc) short circuit collector current v cc = 400 v, t sc ? 5s, v ge = 15v, t c = 25 e -- 180 -- a switching characteristics package marking and odering information device marking week marking package packing quantity rohs status HIH30N60BP ywwx to-3p tube 30 pb free HIH30N60BP ywwxg to-3p tube 30 halogen free
q?v~zy??q?v?_ra]u??qcabdq HIH30N60BP v fm diode forward voltage i f = 30 a, v ge = 0 v t c = 25 e -- -- 2.3 1.9 -- -- v t c = 125 e t rr diode reverse recovery time i f = 30 a, v r = 300 v di f /dt = 200 a/ v ,t c = 25 e -- 167 -- i rr diode peak reverse recovery current -- 15 -- a q rr diode reverse recovery charge -- 0.88 -- & di rr /dt diode peak rate of fall of reverse recovery current during t b -- 96 -- a/ ? e rec diode reverse recovery energy -- 0.17 -- mj t rr diode reverse recovery time i f = 30 a, v r = 300 v di f /dt = 200 a/ v ,t c = 125 e -- 335 -- i rr diode peak reverse recovery current -- 30 -- a q rr diode reverse recovery charge -- 1.43 -- & di rr /dt diode peak rate of fall of reverse recovery current during t b -- 90 -- a/ ? e rec diode reverse recovery energy -- 0.35 -- mj electrical characteristics of the diode
q?v~zy??q?v?_ra]u??qcabdq HIH30N60BP typical characteristics
q?v~zy??q?v?_ra]u??qcabdq HIH30N60BP typical characteristics
q?v~zy??q?v?_ra]u??qcabdq HIH30N60BP typical characteristics
q?v~zy??q?v?_ra]u??qcabdq HIH30N60BP package dimension 19.9 0.20 9.6 0.20 13.6 0.20 15.6 0.20 14.9 0.20 3.5 0.20 16.5 0.20 5.45typ 5.45typ 2 0.20 1 0.20 3 0.20 13.9 0.20 18.7 0.20 1.5 0.20 4.8 0.20 1.4 0.20 0.6 0.20 3 0.20 { v t z w g
|
